Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchangeWEYHER, J. L; SOCHACKI, T; BOCKOWSKI, M et al.Journal of crystal growth. 2014, Vol 403, pp 77-82, issn 0022-0248, 6 p.Conference Paper

High nitrogen pressure solution growth of bulk GaN in feed-seed configurationBOCKOWSKI, M; GRZEGORY, I; LUCZNIK, B et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1507-1510, issn 1862-6300, 4 p.Article

HVPE-GaN growth on misoriented ammonothermal GaN seedsSOCHACKI, T; AMILUSIK, M; GRZEGORY, I et al.Journal of crystal growth. 2014, Vol 403, pp 32-37, issn 0022-0248, 6 p.Conference Paper

Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti maskAMILUSIK, M; SOCHACKI, T; LUCZNIK, B et al.Journal of crystal growth. 2013, Vol 380, pp 99-105, issn 0022-0248, 7 p.Article

Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seedsSOCHACKI, T; AMILUSIK, M; FIJALKOWSKI, M et al.Journal of crystal growth. 2014, Vol 407, pp 52-57, issn 0022-0248, 6 p.Article

Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seedsAMILUSIK, M; SOCHACKI, T; LUCZNIK, B et al.Journal of crystal growth. 2014, Vol 403, pp 48-54, issn 0022-0248, 7 p.Conference Paper

Multi feed seed (MFS) high pressure crystallization of 1―2 in GaNBOCKOWSKI, M; GRZEGORY, I; LUCZNIK, B et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 5-10, issn 0022-0248, 6 p.Conference Paper